Ch-technology HFA32PA120C User Manual download pdf

Document Number: 93095 For technical questions, contact: diodes-tech@vishay.com

www.vishay.com

Revision: 29-Jul-08 1

HEXFRED

Ultrafast Soft Recovery Diode, 2 x 16 A

HFA32PA120C

Vishay High Power Products

FEATURES

• Ultrafast recovery

• Ultrasoft recovery

• Very low I

RRM

• Very low Q

• Specified at operating conditions

• Designed and qualified for industrial level

BENEFITS

• Reduced RFI and EMI

• Reduced power loss in diode and switching transistor

• Higher frequency operation

• Reduced snubbing

• Reduced parts count

DESCRIPTION

HFA32PA120C is a state of the art ultrafast recovery diode.

Employing the latest in epitaxial construction and advanced

processing techniques it features a superb combination of

characteristics which result in performance which is

unsurpassed by any rectifier previously available. With basic

ratings of 1200 V and 16 A per leg continuous current, the

HFA32PA120C is especially well suited for use as the

companion diode for IGBTs and MOSFETs. In addition to

ultrafast recovery time, the HEXFRED

product line features

extremely low values of peak recovery current (I

RRM

) and

does not exhibit any tendency to “snap-off” during the

portion of recovery. The HEXFRED features combine to

offer designers a rectifier with lower noise and significantly

lower switching losses in both the diode and the switching

transistor. These HEXFRED advantages can help to

significantly reduce snubbing, component count and

heatsink sizes. The HEXFRED HFA32PA120C is ideally

suited for applications in power supplies and power

conversion systems (such as inverters), motor drives, and

many other similar applications where high speed, high

efficiency is needed.

PRODUCT SUMMARY

per leg 1200 V

at 16 A at 25 °C 3.0 V

F(AV)

2 x 16 A

(typical) per leg 5.8 A

(maximum) 150 °C

(typical) per leg 260 nC

RRM

(typical) per leg 5.8 A

TO-247AC

Base

common

cathode

Common

cathode

1 3

Anode

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Cathode to anode voltage V

1200 V

Maximum continuous forward current

per leg

= 100 °C

per device 32

Single pulse forward current I

FSM

190

Maximum repetitive forward current I

FRM

Maximum power dissipation P

= 25 °C 151

°C

= 100 °C 60

Operating junction and storage temperature range T

, T

Stg

- 55 to + 150 W

1 2 3 4 5 6 7

Summary of Contents

Page 1 - HFA32PA120C

Document Number: 93095 For technical questions, contact: [email protected]: 29-Jul-08 1HEXFRED®Ultrafast Soft Recovery Dio

Page 2

www.vishay.com For technical questions, contact: [email protected] Number: 930952 Revision: 29-Jul-08HFA32PA120CVishay High Power Produc

Page 3 - Vishay High Power Products

Document Number: 93095 For technical questions, contact: [email protected]: 29-Jul-08 3HFA32PA120CHEXFRED®Ultrafast Soft R

Page 4

www.vishay.com For technical questions, contact: [email protected] Number: 930954 Revision: 29-Jul-08HFA32PA120CVishay High Power Produc

Page 5

Document Number: 93095 For technical questions, contact: [email protected]: 29-Jul-08 5HFA32PA120CHEXFRED®Ultrafast Soft R

Page 6

www.vishay.com For technical questions, contact: [email protected] Number: 930956 Revision: 29-Jul-08HFA32PA120CVishay High Power Produc

Page 7 - Legal Disclaimer Notice

Legal Disclaimer NoticeVishay Document Number: 99901 www.vishay.comRevision: 12-Mar-07 1NoticeThe products described herein were acquired by Vishay In

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