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1FeaturesTarget Data 03/09GT100LA120USOT 227 TRENCH IGBT, 100 ALow Side ChopperVishay Semiconductor ItalyRevision: 18-Mar-09SOT-227Absolute Maximu
GT100LA120UVishay Semiconductor Italy2Revision 18-Mar-09RthCSCase-to-Sink, flat, greased surface 0.05 °C/ WT Mounting torque (M3 screw) 1.3 NmWt Weigh
GT100LA120UVishay Semiconductor Italy3Revision 18-Mar-09IGBT SwitchQgTotal Gate Charge (turn-on) 400 IC = 100A, VGE = 15V, VCC = 600VQgeGate-Emitter C
GT100LA120UVishay Semiconductor Italy4Revision 18-Mar-094.40 (.173 )4.20 (.165 )12.50 ( .492 )7.50 ( .295 )2.10 ( .082 )1.90 ( .075 )30.20 ( 1.189 )29
GT100LA120UVishay Semiconductor Italy5Revision 18-Mar-09G T 100 L A 120 UDevice Code12 3451 - Insulated Gate Bipolar Transistor (IGBT)2 - T = Trench I
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